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BFP181E7764HTSA1

BFP181E7764HTSA1 Infineon Technologies

Infineon_BFP181_DS_v01_01_en.pdf
Hersteller: Infineon Technologies
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
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Technische Details BFP181E7764HTSA1 Infineon Technologies

Description: RF TRANS NPN 12V 8GHZ SOT-143-3D, Part Status: Active, Supplier Device Package: PG-SOT-143-3D, Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz, Frequency - Transition: 8GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V, Voltage - Collector Emitter Breakdown (Max): 12V, Current - Collector (Ic) (Max): 20mA, Power - Max: 175mW, Gain: 17.5dB ~ 21dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-253-4, TO-253AA, Packaging: Tape & Reel (TR).

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BFP181E7764HTSA1 BFP181E7764HTSA1 Infineon Technologies bfp181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142665c77b0601&location=.en.product.findProductTypeByName.html_dgdl_bfp181.pdf Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Part Status: Active
Supplier Device Package: PG-SOT-143-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 20mA
Power - Max: 175mW
Gain: 17.5dB ~ 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP181E7764HTSA1 bfp181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142665c77b0601&location=.en.product.findProductTypeByName.html_dgdl_bfp181.pdf
BFP181E7764HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Part Status: Active
Supplier Device Package: PG-SOT-143-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 20mA
Power - Max: 175mW
Gain: 17.5dB ~ 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH