BFP182RE7764HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143R-4
Packaging: Bulk
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT143-4-1
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Technische Details BFP182RE7764HTSA1 Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143R-4, Current - Collector (Ic) (Max): 35mA, Power - Max: 250mW, Gain: 22dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-143R, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PG-SOT143-4-1, Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz, Frequency - Transition: 8GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V, Voltage - Collector Emitter Breakdown (Max): 12V.
Weitere Produktangebote BFP182RE7764HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
BFP182RE7764HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT143R-4Current - Collector (Ic) (Max): 35mA Power - Max: 250mW Gain: 22dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-143R Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: PG-SOT143-4-1 Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Frequency - Transition: 8GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Voltage - Collector Emitter Breakdown (Max): 12V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
BFP182RE7764HTSA1 | Infineon Technologies |
RF Bipolar Transistors NPN Silicon RF TRANSISTOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BFP182RE7764HTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143R-4
Current - Collector (Ic) (Max): 35mA
Power - Max: 250mW
Gain: 22dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-SOT143-4-1
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Description: RF TRANS NPN 12V 8GHZ SOT143R-4
Current - Collector (Ic) (Max): 35mA
Power - Max: 250mW
Gain: 22dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-SOT143-4-1
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP182RE7764HTSA1 |
![]() |
Hersteller: Infineon Technologies
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen
Stück im Wert von UAH


