BFP193E6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: BFP193 - HIGH LINEARITY SI- AND
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Description: BFP193 - HIGH LINEARITY SI- AND
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3355+ | 0.16 EUR |
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Technische Details BFP193E6327 Infineon Technologies
Description: BFP193 - HIGH LINEARITY SI- AND, Packaging: Bulk, Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 18dB, Power - Max: 580mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz, Supplier Device Package: SOT143 (SC-61), Part Status: Active.
Weitere Produktangebote BFP193E6327 nach Preis ab 0.16 EUR bis 0.64 EUR
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BFP193E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143 Mounting: SMD Collector-emitter voltage: 12V Current gain: 70...140 Collector current: 80mA Type of transistor: NPN Power dissipation: 0.58W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF Case: SOT143 Frequency: 8GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 345 Stücke: Lieferzeit 7-14 Tag (e) |
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BFP193E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143 Mounting: SMD Collector-emitter voltage: 12V Current gain: 70...140 Collector current: 80mA Type of transistor: NPN Power dissipation: 0.58W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF Case: SOT143 Frequency: 8GHz |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP 193 E6327 | Hersteller : Infineon Technologies | RF Bipolar Transistors NPN Silicon RF TRANSISTOR |
auf Bestellung 3433 Stücke: Lieferzeit 10-14 Tag (e) |
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BFP193-E6327 |
auf Bestellung 8500 Stücke: Lieferzeit 21-28 Tag (e) |
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BFP193 E6327 | Hersteller : INFINEON | RCS/143 BD |
auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) |
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BFP193E6327 Produktcode: 113898 |
Transistoren > Bipolar-Transistoren NPN |
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