BFP 520F H6327 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 1.47 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.33 EUR |
| 6000+ | 0.29 EUR |
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Technische Details BFP 520F H6327 Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 22.5dB, Power - Max: 120mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 2.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V, Frequency - Transition: 45GHz, Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz, Supplier Device Package: 4-TSFP, Part Status: Active.
Weitere Produktangebote BFP 520F H6327 nach Preis ab 0.28 EUR bis 0.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|
| BFP520FH6327 | Infineon Technologies |
 Description: LOW-NOISE SI TRANSISTORPackaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 22.5dB Power - Max: 120mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 2.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Supplier Device Package: 4-TSFP Part Status: Active |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BFP520FH6327 | Infineon technologies |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BFP520FH6327 |
|
Hersteller: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22.5dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 2.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22.5dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 2.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1854+ | 0.28 EUR |
| BFP520FH6327 |
|
Hersteller: Infineon technologies
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)