Technische Details BFP 540 H6327 Infineon Technologies
Category: NPN SMD transistors, Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343, Type of transistor: NPN, Collector current: 80mA, Mounting: SMD, Collector-emitter voltage: 4.5V, Power dissipation: 0.25W, Polarisation: bipolar, Technology: SIEGET™, Kind of transistor: RF, Kind of package: reel; tape, Case: SOT343, Frequency: 33GHz.
Weitere Produktangebote BFP 540 H6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BFP540H6327 | INFINEON TECHNOLOGIES |
 Category: NPN SMD transistorsDescription: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343 Type of transistor: NPN Collector current: 80mA Mounting: SMD Collector-emitter voltage: 4.5V Power dissipation: 0.25W Polarisation: bipolar Technology: SIEGET™ Kind of transistor: RF Kind of package: reel; tape Case: SOT343 Frequency: 33GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP540H6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 4.5V
Power dissipation: 0.25W
Polarisation: bipolar
Technology: SIEGET™
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 33GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 4.5V
Power dissipation: 0.25W
Polarisation: bipolar
Technology: SIEGET™
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 33GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH