Technische Details BFP620E7764 INF
Description: RF BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 21.5dB, Power - Max: 185mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 2.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V, Frequency - Transition: 65GHz, Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz, Supplier Device Package: PG-SOT343-4, Part Status: Active.
Weitere Produktangebote BFP620E7764
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BFP620E7764 | Infineon Technologies |
Description: RF BIPOLAR TRANSISTORPackaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 185mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 2.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Supplier Device Package: PG-SOT343-4 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
BFP 620 E7764 | Infineon Technologies |
RF Bipolar Transistors NPN 2.3 V 80 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP620E7764 |
![]() |
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFP 620 E7764 |
![]() |
Hersteller: Infineon Technologies
RF Bipolar Transistors NPN 2.3 V 80 mA
RF Bipolar Transistors NPN 2.3 V 80 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



