BFP650FH6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 42GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 150mA
Power - Max: 500mW
Gain: 11dB ~ 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details BFP650FH6327XTSA1 Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP, Part Status: Active, Supplier Device Package: 4-TSFP, Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz, Frequency - Transition: 42GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V, Voltage - Collector Emitter Breakdown (Max): 4.5V, Current - Collector (Ic) (Max): 150mA, Power - Max: 500mW, Gain: 11dB ~ 21.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote BFP650FH6327XTSA1 nach Preis ab 0.29 EUR bis 0.74 EUR
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BFP650FH6327XTSA1 | Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTOR |
auf Bestellung 3956 Stücke: Lieferzeit 10-14 Tag (e) |
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BFP650FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFPPart Status: Active Supplier Device Package: 4-TSFP Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Frequency - Transition: 42GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 150mA Power - Max: 500mW Gain: 11dB ~ 21.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 17172 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BFP650FH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTOR
RF Bipolar Transistors RF BIP TRANSISTOR
auf Bestellung 3956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.33 EUR |
| 3000+ | 0.29 EUR |
| BFP650FH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 42GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 150mA
Power - Max: 500mW
Gain: 11dB ~ 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 42GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 150mA
Power - Max: 500mW
Gain: 11dB ~ 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 17172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 34+ | 0.52 EUR |
| 38+ | 0.46 EUR |
| 100+ | 0.4 EUR |
| 250+ | 0.37 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.34 EUR |


