BFP 720F E6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP
Part Status: Obsolete
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 25mA
Power - Max: 100mW
Gain: 10.5dB ~ 28dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details BFP 720F E6327 Infineon Technologies
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP, Part Status: Obsolete, Supplier Device Package: 4-TSFP, Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz, Frequency - Transition: 45GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V, Voltage - Collector Emitter Breakdown (Max): 4.7V, Current - Collector (Ic) (Max): 25mA, Power - Max: 100mW, Gain: 10.5dB ~ 28dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote BFP 720F E6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BFP720FE6327 | Infineon Technologies |
Description: RF TRANSISTOR, X BAND, NPN Packaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 28dB Power - Max: 100mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Supplier Device Package: 4-TSFP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP720FE6327 |
|
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH