BFP840ESDH6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 41+ | 0.43 EUR |
| 46+ | 0.38 EUR |
| 100+ | 0.33 EUR |
| 250+ | 0.31 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
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Technische Details BFP840ESDH6327XTSA1 Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 18.5dB, Power - Max: 75mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 2.25V, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V, Frequency - Transition: 80GHz, Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz, Supplier Device Package: PG-SOT343-4-2.
Weitere Produktangebote BFP840ESDH6327XTSA1 nach Preis ab 0.34 EUR bis 0.79 EUR
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BFP840ESDH6327XTSA1 | Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTORS |
auf Bestellung 7655 Stücke: Lieferzeit 10-14 Tag (e) |
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| BFP840ESDH6327XTSA1 |
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Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTORS
RF Bipolar Transistors RF BIP TRANSISTORS
auf Bestellung 7655 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.79 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.34 EUR |