BFP843H6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V PGSOT-343-4-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
Produktrezensionen
Produktbewertung abgeben
Technische Details BFP843H6327XTSA1 Infineon Technologies
Description: RF TRANS NPN 2.25V PGSOT-343-4-3, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13.5dB ~ 24.5dB, Power - Max: 125mW, Current - Collector (Ic) (Max): 55mA, Voltage - Collector Emitter Breakdown (Max): 2.25V, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V, Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz, Supplier Device Package: PG-SOT343-4-3.
Weitere Produktangebote BFP843H6327XTSA1 nach Preis ab 0.33 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BFP843H6327XTSA1 | Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTORS |
auf Bestellung 8307 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
BFP843H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.25V PGSOT-343-4-3 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 24.5dB Power - Max: 125mW Current - Collector (Ic) (Max): 55mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz Supplier Device Package: PG-SOT343-4-3 |
auf Bestellung 8762 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BFP843H6327XTSA1 |
|
Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTORS
RF Bipolar Transistors RF BIP TRANSISTORS
auf Bestellung 8307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.48 EUR |
| 10+ | 0.89 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.35 EUR |
| 6000+ | 0.33 EUR |
| BFP843H6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V PGSOT-343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
Description: RF TRANS NPN 2.25V PGSOT-343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
auf Bestellung 8762 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 19+ | 0.97 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |