Produkte > INFINEON TECHNOLOGIES > BFQ790H6327XTSA1

BFQ790H6327XTSA1 Infineon Technologies


Infineon_BFQ790_DS_v03_00_EN-3160335.pdf
Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTORS
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.91 EUR
250+2.34 EUR
500+2.22 EUR
1000+1.99 EUR
2000+1.94 EUR
5000+1.88 EUR
10000+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BFQ790H6327XTSA1 Infineon Technologies

Description: RF TRANS NPN 6.1V 1.85GHZ SOT-89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Gain: 17dB, Power - Max: 1.5W, Current - Collector (Ic) (Max): 300mA, Voltage - Collector Emitter Breakdown (Max): 6.1V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V, Frequency - Transition: 1.85GHz, Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz, Supplier Device Package: PG-SOT89.

Weitere Produktangebote BFQ790H6327XTSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BFQ790H6327XTSA1 BFQ790H6327XTSA1 Infineon Technologies Infineon-BFQ790-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d237c2a8f54fc Description: RF TRANS NPN 6.1V 1.85GHZ SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 17dB
Power - Max: 1.5W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Frequency - Transition: 1.85GHz
Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
Supplier Device Package: PG-SOT89
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFQ790H6327XTSA1 BFQ790H6327XTSA1 Infineon Technologies Infineon-BFQ790-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d237c2a8f54fc Description: RF TRANS NPN 6.1V 1.85GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 17dB
Power - Max: 1.5W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Frequency - Transition: 1.85GHz
Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
Supplier Device Package: PG-SOT89
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFQ790H6327XTSA1 Infineon-BFQ790-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d237c2a8f54fc
Hersteller: Infineon Technologies
Description: RF TRANS NPN 6.1V 1.85GHZ SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 17dB
Power - Max: 1.5W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Frequency - Transition: 1.85GHz
Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
Supplier Device Package: PG-SOT89
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFQ790H6327XTSA1 Infineon-BFQ790-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d237c2a8f54fc
Hersteller: Infineon Technologies
Description: RF TRANS NPN 6.1V 1.85GHZ SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 17dB
Power - Max: 1.5W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Frequency - Transition: 1.85GHz
Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
Supplier Device Package: PG-SOT89
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH