BFU730F,115

BFU730F,115

Produktcode: 99614
Hersteller:
Transistoren - Bipolar-Transistoren NPN

BFU730F.pdf
verfügbar/auf Bestellung

Technische Details BFU730F,115

Preis BFU730F,115 ab 0.51 EUR bis 1.39 EUR

BFU730F,115
BFU730F,115
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 2.8V 55GHZ 4DFP
Base Part Number: BFU730
Supplier Device Package: 4-DFP
Package / Case: SOT-343F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 2V
Power - Max: 197mW
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
Frequency - Transition: 55GHz
Voltage - Collector Emitter Breakdown (Max): 2.8V
Transistor Type: NPN
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: NXP USA Inc.
BFU730F.pdf
auf Bestellung 90000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.83 EUR
BFU730F,115
BFU730F,115
Hersteller: NXP Semiconductors
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
BFU730F-1151991.pdf
auf Bestellung 46794 Stücke
Lieferzeit 14-28 Tag (e)
46+ 1.03 EUR
54+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
BFU730F,115
BFU730F,115
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 2.8V 55GHZ 4DFP
Transistor Type: NPN
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: NXP USA Inc.
Base Part Number: BFU730
Supplier Device Package: 4-DFP
Package / Case: SOT-343F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 2V
Power - Max: 197mW
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
Frequency - Transition: 55GHz
Voltage - Collector Emitter Breakdown (Max): 2.8V
BFU730F.pdf
auf Bestellung 91133 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.39 EUR
20+ 1.19 EUR
100+ 0.89 EUR
500+ 0.86 EUR
BFU730F,115
BFU730F,115
Hersteller: NXP
Description: NXP - BFU730F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 55 GHz, 197 mW, 5 mA, SOT-343F
Transistor Polarity: NPN
Product Range: -
Power Dissipation Pd: 197
DC Current Gain hFE: 205
Operating Temperature Max: 150
Transistor Mounting: Surface Mount
MSL: MSL 1 - Unlimited
Automotive Qualification Standard: -
DC Collector Current: 5
RF Transistor Case: SOT-343F
Transition Frequency ft: 55
No. of Pins: 4
Collector Emitter Voltage V(br)ceo: 2.8
2353633.pdf
5835 Stücke
BFU730F,115
BFU730F,115
Hersteller: NXP
Description: NXP - BFU730F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 55 GHz, 197 mW, 5 mA, SOT-343F
Transistor Polarity: NPN
Product Range: -
Power Dissipation Pd: 197
DC Current Gain hFE: 205
Operating Temperature Max: 150
Transistor Mounting: Surface Mount
MSL: MSL 1 - Unlimited
Automotive Qualification Standard: -
DC Collector Current: 5
RF Transistor Case: SOT-343F
Transition Frequency ft: 55
No. of Pins: 4
Collector Emitter Voltage V(br)ceo: 2.8
2353633.pdf
5835 Stücke
BFU730F,115
Hersteller: NXP Semiconductors
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3+Tab) DFP T/R
BFU730F.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BFU730F,115
Hersteller: NXP Semiconductors
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3+Tab) DFP T/R
BFU730F.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen