BFU768F,115 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: BFU768F - NPN WIDEBAND SILICON G
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.1dB
Power - Max: 220mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
Frequency - Transition: 110GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.2dB @ 5GHz ~ 5.9GHz
Supplier Device Package: 4-DFP
| Anzahl | Preis |
|---|---|
| 1845+ | 0.27 EUR |
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Technische Details BFU768F,115 NXP Semiconductors
Description: BFU768F - NPN WIDEBAND SILICON G, Packaging: Bulk, Package / Case: SOT-343F, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13.1dB, Power - Max: 220mW, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 2.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V, Frequency - Transition: 110GHz, Noise Figure (dB Typ @ f): 1.1dB ~ 1.2dB @ 5GHz ~ 5.9GHz, Supplier Device Package: 4-DFP.
Weitere Produktangebote BFU768F,115 nach Preis ab 0.22 EUR bis 1.3 EUR
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BFU768F,115 | Hersteller : NXP Semiconductors |
RF Bipolar Transistors 4-pin Dual-Emitter Microwave Transistor |
auf Bestellung 4554 Stücke: Lieferzeit 10-14 Tag (e) |
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BFU768F,115 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 2.8V 70MA 4DFP Packaging: Cut Tape (CT) Package / Case: SOT-343F Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.1dB Power - Max: 220mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 2.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz Supplier Device Package: 4-DFP |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
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BFU768F,115 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 2.8V 70MA 4DFP Packaging: Tape & Reel (TR) Package / Case: SOT-343F Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.1dB Power - Max: 220mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 2.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz Supplier Device Package: 4-DFP |
Produkt ist nicht verfügbar |