auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.64 EUR |
| 10+ | 4.36 EUR |
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Technische Details BIDW50N65T Bourns
Description: IGBT TRENCH FS 650V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37.5 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/125ns, Switching Energy: 3mJ (on), 1.1mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 123 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 416 W.
Weitere Produktangebote BIDW50N65T nach Preis ab 3.87 EUR bis 7.81 EUR
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BIDW50N65T | Hersteller : Bourns Inc. |
 Description: IGBT TRENCH FS 650V 100A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37.5 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/125ns Switching Energy: 3mJ (on), 1.1mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 123 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 416 W |
auf Bestellung 2853 Stücke: Lieferzeit 10-14 Tag (e) |
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| BIDW50N65T | Hersteller : Bourns |
Trans IGBT Chip N-CH 650V 100A 416W 3-Pin(3+Tab) TO-247 Tube |
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