BQ4010YMA-85N Texas Instruments
Hersteller: Texas InstrumentsDescription: IC NVSRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP Module (0.61", 15.49mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-DIP Module (18.42x37.72)
Write Cycle Time - Word, Page: 85ns
Memory Interface: Parallel
Access Time: 85 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 29.60 EUR |
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Technische Details BQ4010YMA-85N Texas Instruments
Description: IC NVSRAM 64KBIT PARALLEL 28DIP, Packaging: Tube, Package / Case: 28-DIP Module (0.61", 15.49mm), Mounting Type: Through Hole, Memory Size: 64Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 28-DIP Module (18.42x37.72), Write Cycle Time - Word, Page: 85ns, Memory Interface: Parallel, Access Time: 85 ns, Memory Organization: 8K x 8, DigiKey Programmable: Not Verified.
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BQ4010YMA-85N | Hersteller : Texas Instruments |
Description: IC NVSRAM 64KBIT PARALLEL 28DIP Packaging: Tube Package / Case: 28-DIP Module (0.61", 15.49mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-DIP Module (18.42x37.72) Write Cycle Time - Word, Page: 85ns Memory Interface: Parallel Access Time: 85 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |