BQ4013LYMA-70N Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 25+ | 58.36 EUR |
| 100+ | 54.64 EUR |
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Technische Details BQ4013LYMA-70N Texas Instruments
Description: IC NVSRAM 1MBIT PAR 32DIP MODULE, Packaging: Tube, Package / Case: 32-DIP Module (0.610", 15.49mm), Mounting Type: Through Hole, Memory Size: 1Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 32-DIP Module (18.42x42.8), Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 128K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote BQ4013LYMA-70N nach Preis ab 61.44 EUR bis 61.44 EUR
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BQ4013LYMA-70N | Texas Instruments |
 Description: IC NVSRAM 1MBIT PAR 32DIP MODULEPackaging: Tube Package / Case: 32-DIP Module (0.610", 15.49mm) Mounting Type: Through Hole Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-DIP Module (18.42x42.8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 434 Stücke: Lieferzeit 10-14 Tag (e) |
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| BQ4013LYMA-70N |
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Hersteller: Texas Instruments
Description: IC NVSRAM 1MBIT PAR 32DIP MODULE
Packaging: Tube
Package / Case: 32-DIP Module (0.610", 15.49mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-DIP Module (18.42x42.8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 32DIP MODULE
Packaging: Tube
Package / Case: 32-DIP Module (0.610", 15.49mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-DIP Module (18.42x42.8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 61.44 EUR |