BR93G86FVJ-3BGTE2 ROHM Semiconductor
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Technische Details BR93G86FVJ-3BGTE2 ROHM Semiconductor
Description: IC EEPROM 16KBIT MIC WIRE 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Memory Size: 16Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 5.5V, Technology: EEPROM, Clock Frequency: 3 MHz, Memory Format: EEPROM, Supplier Device Package: 8-TSSOP-BJ, Write Cycle Time - Word, Page: 5ms, Memory Interface: Microwire, Memory Organization: 1K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote BR93G86FVJ-3BGTE2
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BR93G86FVJ-3BGTE2 | Hersteller : Rohm Semiconductor |
 Description: IC EEPROM 16KBIT MIC WIRE 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-BJ Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Not Verified |
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