BS2100F-E2 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IC DVR IGBT/MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.6V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC DVR IGBT/MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.6V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.94 EUR |
| 11+ | 1.72 EUR |
| 25+ | 1.64 EUR |
| 100+ | 1.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BS2100F-E2 Rohm Semiconductor
Description: IC DVR IGBT/MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 18V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOP, Rise / Fall Time (Typ): 200ns, 100ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 1V, 2.6V, Current - Peak Output (Source, Sink): 60mA, 130mA, Part Status: Last Time Buy, DigiKey Programmable: Not Verified.
Weitere Produktangebote BS2100F-E2 nach Preis ab 1.85 EUR bis 2.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BS2100F-E2 | Hersteller : ROHM Semiconductor |
 Gate Drivers 600V Hi voltage High Low-side Gate Driver |
auf Bestellung 2500 Stücke: Lieferzeit 374-378 Tag (e) |
|
||||||||||
|
|
BS2100F-E2 | Hersteller : Rohm Semiconductor |
Description: IC DVR IGBT/MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOP Rise / Fall Time (Typ): 200ns, 100ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1V, 2.6V Current - Peak Output (Source, Sink): 60mA, 130mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |