Technische Details BS2114F-E2 ROHM Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 8SOIC, DigiKey Programmable: Not Verified, Part Status: Obsolete, Logic Voltage - VIL, VIH: 0.8V, 2.6V, Gate Type: IGBT, MOSFET (N-Channel), Number of Drivers: 2, Driven Configuration: High-Side or Low-Side, Channel Type: Independent, Rise / Fall Time (Typ): 30ns, 30ns, Supplier Device Package: 8-SOP, High Side Voltage - Max (Bootstrap): 600 V, Input Type: Inverting, Voltage - Supply: 10V ~ 20V, Operating Temperature: -40°C ~ 125°C (TA), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote BS2114F-E2
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BS2114F-E2 | Hersteller : Rohm Semiconductor |
Description: IC GATE DRVR HI/LOW SIDE 8SOIC DigiKey Programmable: Not Verified Part Status: Obsolete Logic Voltage - VIL, VIH: 0.8V, 2.6V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: High-Side or Low-Side Channel Type: Independent Rise / Fall Time (Typ): 30ns, 30ns Supplier Device Package: 8-SOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
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