BS870Q-7-F Diodes Incorporated


BS870Q.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 250MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 300mW
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 123000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.096 EUR
15000+0.082 EUR
30000+0.077 EUR
75000+0.073 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details BS870Q-7-F Diodes Incorporated

Description: MOSFET N-CH 60V 250MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 300mW, Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote BS870Q-7-F nach Preis ab 0.094 EUR bis 0.63 EUR

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BS870Q-7-F BS870Q-7-F Diodes Incorporated DIOD_S_A0005424881_1-2542540.pdf MOSFET MOSFET BVDSS: 41V-60V SOT23 T&R 3K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.61 EUR
10+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
3000+0.11 EUR
6000+0.094 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BS870Q-7-F BS870Q-7-F Diodes Incorporated BS870Q.pdf Description: MOSFET N-CH 60V 250MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 300mW
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 123000 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
41+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BS870Q-7-F DIOD_S_A0005424881_1-2542540.pdf
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V-60V SOT23 T&R 3K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+0.61 EUR
10+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
3000+0.11 EUR
6000+0.094 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BS870Q-7-F BS870Q.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 250MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 300mW
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 123000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
41+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH