BSB012NE2LXIXUMA1 Infineon Technologies
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.47 EUR |
| 10+ | 4.03 EUR |
| 100+ | 3.24 EUR |
| 500+ | 2.66 EUR |
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Technische Details BSB012NE2LXIXUMA1 Infineon Technologies
Description: MOSFET N-CH 25V 170A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5852 pF @ 12 V.
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| BSB012NE2LXIXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
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BSB012NE2LXIXUMA1 | Hersteller : Infineon Technologies |
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BSB012NE2LXIXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 170A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5852 pF @ 12 V |
Produkt ist nicht verfügbar |