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BSB013NE2LXIXUMA1

BSB013NE2LXIXUMA1 Infineon Technologies

BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
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Technische Details BSB013NE2LXIXUMA1 Infineon Technologies

Description: MOSFET N-CH 25V 36A/163A 2WDSON, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON, Packaging: Tape & Reel (TR).

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BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 Infineon Technologies BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577 Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 Infineon Technologies BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577 Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB013NE2LXIXUMA1 BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577
BSB013NE2LXIXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB013NE2LXIXUMA1 BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577
BSB013NE2LXIXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH