BSB056N10NN3GXUMA1
Produktcode: 125684
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Weitere Produktangebote BSB056N10NN3GXUMA1 nach Preis ab 2.22 EUR bis 6.37 EUR
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BSB056N10NN3GXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 9A/83A 2WDSON Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: MG-WDSON-2, CanPAK M™ Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-WDSON Packaging: Cut Tape (CT) |
auf Bestellung 1429 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSB056N10NN3GXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/83A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9A/83A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.37 EUR |
| 10+ | 4.17 EUR |
| 100+ | 2.92 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.22 EUR |