Technische Details BSB165N15NZ3 G Infineon Technologies
Description: BSB165N15 - 12V-300V N-CHANNEL P, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: MG-WDSON-2-9, Vgs(th) (Max) @ Id: 4V @ 110µA, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MZ, Packaging: Bulk, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V.
Weitere Produktangebote BSB165N15NZ3 G nach Preis ab 3.08 EUR bis 3.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSB165N15NZ3 G | Infineon Technologies |
 Description: MOSFET N-CH 150V 9A WDSON-2 |
auf Bestellung 9105 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| BSB165N15NZ3G | Infineon Technologies |
Description: BSB165N15 - 12V-300V N-CHANNEL P Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: MG-WDSON-2-9 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MZ Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 150 V |
auf Bestellung 4012 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSB165N15NZ3G | Infineon technologies |
|
auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSB165N15NZ3 G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A WDSON-2
Description: MOSFET N-CH 150V 9A WDSON-2
auf Bestellung 9105 Stücke:
Lieferzeit 10-14 Tag (e)
| BSB165N15NZ3G |
|
Hersteller: Infineon Technologies
Description: BSB165N15 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-9
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Description: BSB165N15 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-9
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 4012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 156+ | 3.08 EUR |
| BSB165N15NZ3G |
|
Hersteller: Infineon technologies
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)