BSB280N15NZ3G Infineon

Description: BSB280N15 - 12V-300V N-CHANNEL P, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MX, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: MG-WDSON-2-5, Vgs(th) (Max) @ Id: 4V @ 60µA, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V.