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BSC014N06NSSCATMA1 Infineon Technologies


Infineon-BSC014N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dcc560080
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 261A WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 261A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
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Technische Details BSC014N06NSSCATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 261A WSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 261A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 188W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 120µA, Supplier Device Package: PG-WSON-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V.

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BSC014N06NSSCATMA1 BSC014N06NSSCATMA1 Infineon Technologies Infineon-BSC014N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dcc560080 Description: MOSFET N-CH 60V 261A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 261A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N06NSSCATMA1 BSC014N06NSSCATMA1 Infineon Technologies Infineon_BSC014N06NSSC_DataSheet_v02_01_EN.pdf MOSFETs TRENCH 40<-<100V
Produkt ist nicht verfügbar
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BSC014N06NSSCATMA1 Infineon-BSC014N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dcc560080
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 261A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 261A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N06NSSCATMA1 Infineon_BSC014N06NSSC_DataSheet_v02_01_EN.pdf
Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH