| Anzahl | Preis |
|---|---|
| 1+ | 7.2 EUR |
| 10+ | 5.37 EUR |
| 100+ | 3.84 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 3.15 EUR |
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Technische Details BSC019N08NS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TSON-8-3, Vgs(th) (Max) @ Id: 3.8V @ 146µA, Power Dissipation (Max): 3W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSC019N08NS5ATMA1 nach Preis ab 3.13 EUR bis 8.25 EUR
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BSC019N08NS5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 28A/237A TSON-8Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSON-8-3 Vgs(th) (Max) @ Id: 3.8V @ 146µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4866 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC019N08NS5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4866 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.25 EUR |
| 10+ | 5.48 EUR |
| 100+ | 3.91 EUR |
| 500+ | 3.24 EUR |
| 1000+ | 3.13 EUR |