BSC026N02KSGAUMA1 Infineon Technologies

Description: MOSFET N-CH 20V 25A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V.