BSC029N025SG Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 402+ | 1.57 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
402 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC029N025SG Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2V @ 80µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V.
Weitere Produktangebote BSC029N025SG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BSC029N025S G | Infineon Technologies |
Description: MOSFET N-CH 25V 24A/100A TDSON Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 2V @ 80µA Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSC029N025S G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Description: MOSFET N-CH 25V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH