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BSC034N03LSGATMA1 Infineon Technologies


BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.6 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC034N03LSGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 22A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V.

Weitere Produktangebote BSC034N03LSGATMA1 nach Preis ab 0.51 EUR bis 2.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC034N03LSGATMA1 BSC034N03LSGATMA1 Infineon Technologies Infineon-BSC034N03LS G-DataSheet-v02_00-EN.pdf MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3
auf Bestellung 8037 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.68 EUR
10+0.58 EUR
5000+0.54 EUR
10000+0.51 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC034N03LSGATMA1 BSC034N03LSGATMA1 Infineon Technologies BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC034N03LSGATMA1 Infineon-BSC034N03LS G-DataSheet-v02_00-EN.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3
auf Bestellung 8037 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.68 EUR
10+0.58 EUR
5000+0.54 EUR
10000+0.51 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC034N03LSGATMA1 BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.43 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH