BSC040N08NS5ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 67µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC040N08NS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 67µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V.
Weitere Produktangebote BSC040N08NS5ATMA1 nach Preis ab 1.27 EUR bis 5.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BSC040N08NS5ATMA1 | Infineon |
Trans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP BSC040N08NS5ATMA1 INFINEON TBSC040n08ns5 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
 |
BSC040N08NS5ATMA1 | Infineon Technologies |
MOSFETs N-Ch 80V 100A TDSON-8 |
auf Bestellung 6906 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
BSC040N08NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 67µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V |
auf Bestellung 15728 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSC040N08NS5ATMA1 |
|
Hersteller: Infineon
Trans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP BSC040N08NS5ATMA1 INFINEON TBSC040n08ns5
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP BSC040N08NS5ATMA1 INFINEON TBSC040n08ns5
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 2.3 EUR |
| BSC040N08NS5ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 100A TDSON-8
MOSFETs N-Ch 80V 100A TDSON-8
auf Bestellung 6906 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.48 EUR |
| 5000+ | 1.27 EUR |
| BSC040N08NS5ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 67µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 67µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
auf Bestellung 15728 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.12 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.69 EUR |
| 2000+ | 1.57 EUR |