Technische Details BSC042N03MSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 17A/93A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V.
Weitere Produktangebote BSC042N03MSGATMA1 nach Preis ab 0.75 EUR bis 2.75 EUR
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BSC042N03MSGATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC042N03MSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 17A/93A TDSON Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-5 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4199 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC042N03MSGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.06 EUR |
| BSC042N03MSGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A/93A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 17A/93A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4199 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 13+ | 1.73 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.82 EUR |
| 2000+ | 0.75 EUR |