BSC050N03LSGXT Infineon Technologies
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.25 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.43 EUR |
| 2500+ | 0.39 EUR |
| 5000+ | 0.36 EUR |
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Technische Details BSC050N03LSGXT Infineon Technologies
Description: BSC050N03 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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BSC050N03LSGXT | Hersteller : Infineon Technologies |
 Description: BSC050N03 - 12V-300V N-CHANNEL PPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V |
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