BSC059N03ST Infineon Technologies


Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 19A/89A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 35µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details BSC059N03ST Infineon Technologies

Description: MOSFET N-CH 30V 19A/89A TDSON, Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-TDSON-8-1, Vgs(th) (Max) @ Id: 2V @ 35µA, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

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BSC059N03ST Infineon Technologies Part_Number_Guide_Web.pdf Infineon
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BSC059N03ST Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Infineon
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH