BSC084P03NS3EGATMA1 Infineon Technologies

Description: MOSFET P-CH 30V 14.9A 8TDSON, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Last Time Buy, Supplier Device Package: PG-TDSON-8-5, Vgs(th) (Max) @ Id: 3V @ 110µA, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V.