BSC0906NSATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details BSC0906NSATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSC0906NSATMA1 nach Preis ab 0.31 EUR bis 1.25 EUR
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BSC0906NSATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R |
auf Bestellung 1755 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0906NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 30W Case: PG-TDSON-8 On-state resistance: 4.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ Gate-source voltage: ±20V |
auf Bestellung 2393 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0906NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 18A/63A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V |
auf Bestellung 9793 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC0906NSATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSC0906NSATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
auf Bestellung 1755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1709+ | 0.32 EUR |
| BSC0906NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 2393 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 120+ | 0.6 EUR |
| 156+ | 0.46 EUR |
| 174+ | 0.41 EUR |
| 190+ | 0.38 EUR |
| BSC0906NSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
auf Bestellung 9793 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.31 EUR |
| BSC0906NSATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)