BSC091N03MSCGATMA1 Infineon Technologies

Description: POWER FIELD-EFFECT TRANSISTOR, 1, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.