BSC094N06LS5ATMA1 Infineon Technologies
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.67 EUR |
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Technische Details BSC094N06LS5ATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 14µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V.
Weitere Produktangebote BSC094N06LS5ATMA1 nach Preis ab 0.63 EUR bis 2.62 EUR
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 60V 11A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin TDSON EP T/R |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL 60V 47A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin TDSON EP T/R |
auf Bestellung 4656 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
MOSFETs DIFFERENTIATED MOSFETS |
auf Bestellung 17128 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL 60V 47A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
auf Bestellung 14411 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC094N06LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |