BSC094N06LS5ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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Technische Details BSC094N06LS5ATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 14µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V.
Weitere Produktangebote BSC094N06LS5ATMA1 nach Preis ab 0.41 EUR bis 3.13 EUR
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BSC094N06LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 60V 47A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
auf Bestellung 13019 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC094N06LS5ATMA1 | Infineon Technologies |
MOSFETs DIFFERENTIATED MOSFETS |
auf Bestellung 12009 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC094N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 60V; 47A; 36W; PG-TDSON-8; SMT Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 60V Drain current: 47A Power dissipation: 36W Case: PG-TDSON-8 Gate-source voltage: 20V On-state resistance: 9.4mΩ Mounting: SMD Kind of channel: enhancement Technology: MOSFET Electrical mounting: SMT |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BSC094N06LS5ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 13019 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.73 EUR |
| 11+ | 1.72 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |
| 2000+ | 0.75 EUR |
| BSC094N06LS5ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs DIFFERENTIATED MOSFETS
MOSFETs DIFFERENTIATED MOSFETS
auf Bestellung 12009 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.13 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.86 EUR |
| 2500+ | 0.78 EUR |
| 5000+ | 0.69 EUR |
| BSC094N06LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 47A; 36W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 47A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 47A; 36W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 47A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.41 EUR |