BSC159N10LSFGATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 9.4A/63A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc), Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 72µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V.