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BSC22DN20NS3GATMA1 Infineon Technologies


BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TDSON-8-5
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.59 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC22DN20NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 200V 7A TDSON-8-5, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-5, Vgs(th) (Max) @ Id: 4V @ 13µA, Power Dissipation (Max): 34W (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote BSC22DN20NS3GATMA1 nach Preis ab 0.58 EUR bis 2.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC22DN20NS3GATMA1 BSC22DN20NS3GATMA1 Infineon Technologies Infineon_BSC22DN20NS3_DS_v02_02_en-3360790.pdf MOSFETs N-Ch 200V 7A TDSON-8 OptiMOS 3
auf Bestellung 3015 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.6 EUR
10+1.17 EUR
100+0.89 EUR
250+0.87 EUR
500+0.77 EUR
1000+0.66 EUR
5000+0.58 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC22DN20NS3GATMA1 BSC22DN20NS3GATMA1 Infineon Technologies BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48 Description: MOSFET N-CH 200V 7A TDSON-8-5
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7920 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.39 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.69 EUR
2000+0.65 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC22DN20NS3GATMA1 Infineon_BSC22DN20NS3_DS_v02_02_en-3360790.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 200V 7A TDSON-8 OptiMOS 3
auf Bestellung 3015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.6 EUR
10+1.17 EUR
100+0.89 EUR
250+0.87 EUR
500+0.77 EUR
1000+0.66 EUR
5000+0.58 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC22DN20NS3GATMA1 BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TDSON-8-5
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.15 EUR
13+1.39 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.69 EUR
2000+0.65 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH