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BSC265N10LSFGATMA1

BSC265N10LSFGATMA1 Infineon Technologies

BSC265N10LSF+G_+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a375207b46
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.59 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC265N10LSFGATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 6.5A/40A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 43µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V.

Weitere Produktangebote BSC265N10LSFGATMA1 nach Preis ab 0.6 EUR bis 2.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC265N10LSFGATMA1 BSC265N10LSFGATMA1 Infineon Technologies Infineon_BSC265N10LSFG_DS_v02_08_en.pdf MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2
auf Bestellung 4632 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.32 EUR
10+1.42 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.66 EUR
5000+0.6 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC265N10LSFGATMA1 BSC265N10LSFGATMA1 Infineon Technologies BSC265N10LSF+G_+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a375207b46 Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 14791 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC265N10LSFGATMA1 Infineon_BSC265N10LSFG_DS_v02_08_en.pdf
BSC265N10LSFGATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2
auf Bestellung 4632 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.32 EUR
10+1.42 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.66 EUR
5000+0.6 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC265N10LSFGATMA1 BSC265N10LSF+G_+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a375207b46
BSC265N10LSFGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 14791 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH