BSC340N08NS3GATMA1 Transistor

Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V

Hersteller: Infineon Technologies
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R

Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 23A TDSON-8 OptiMOS 3

Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V

Hersteller: INFINEON
Description: INFINEON - BSC340N08NS3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 23 A, 0.034 ohm, SuperSOT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.8V
Verlustleistung: 32W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SuperSOT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.034ohm

Hersteller: INFINEON
Description: INFINEON - BSC340N08NS3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 23 A, 0.034 ohm, SuperSOT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.8V
Verlustleistung: 32W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SuperSOT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.034ohm

Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 80, Id = 7 А, Ciss, пФ @ Uds, В = 756 @ 40, Qg, нКл = 9,1 @ 10 В, Rds = 34 мОм @ 12 A, 10 В, Ugs(th) = 3,5 В @ 12 мкА, Р, Вт = 2,5, 32, Тексп, °C = -55...+150, Тип монт. = smd, Id2 = 23 A,... Транзистори Корпус: PG-TDSON-8-5 Од
Anzahl je Verpackung: 5000 Stücke