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BSC360N15NS3GATMA1

BSC360N15NS3GATMA1 Infineon Technologies

BSC360N15NS3_Rev2.0.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304328c6bd5c012936a5026a2e2c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
auf Bestellung 4357 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.56 EUR
10+2.28 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.22 EUR
Mindestbestellmenge: 5 Stücke
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Technische Details BSC360N15NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 150V 33A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 45µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V.

Weitere Produktangebote BSC360N15NS3GATMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 Infineon Technologies BSC360N15NS3_Rev2.0.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304328c6bd5c012936a5026a2e2c Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC360N15NS3GATMA1 BSC360N15NS3_Rev2.0.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304328c6bd5c012936a5026a2e2c
BSC360N15NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH