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| Anzahl | Preis |
|---|---|
| 2+ | 2.06 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.19 EUR |
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Technische Details BSC882N03LS G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 34 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V.
Weitere Produktangebote BSC882N03LS G
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BSC882N03LS G | Hersteller : Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V |
Produkt ist nicht verfügbar |
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| BSC882N03LSG | Hersteller : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V |
Produkt ist nicht verfügbar |