Technische Details BSC886N03LSG Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.
Weitere Produktangebote BSC886N03LSG nach Preis ab 0.44 EUR bis 1.51 EUR
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BSC886N03LS G | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETGate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC886N03LS G | Infineon Technologies |
MOSFET N-Ch 30V 65A TDSON-8 |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC886N03LS G |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1205+ | 0.44 EUR |
| BSC886N03LS G |
|
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 65A TDSON-8
MOSFET N-Ch 30V 65A TDSON-8
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.51 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.08 EUR |
| 250+ | 1.05 EUR |