BSDH10G120E2 Bourns Inc.
Hersteller: Bourns Inc.
Description: DIODE SIC 1200V 10A TO220-2
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.84 EUR |
| 50+ | 7.79 EUR |
| 100+ | 6.68 EUR |
| 500+ | 5.94 EUR |
| 1000+ | 5.08 EUR |
| 2000+ | 4.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSDH10G120E2 Bourns Inc.
Description: DIODE SIC 1200V 10A TO220-2, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 481pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky.
Weitere Produktangebote BSDH10G120E2 nach Preis ab 4.9 EUR bis 10.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
BSDH10G120E2 | Bourns |
SiC Schottky Diodes 1200V 10A High Surge SiC diode in TO220-2 |
auf Bestellung 2382 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSDH10G120E2 |
|
Hersteller: Bourns
SiC Schottky Diodes 1200V 10A High Surge SiC diode in TO220-2
SiC Schottky Diodes 1200V 10A High Surge SiC diode in TO220-2
auf Bestellung 2382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.47 EUR |
| 10+ | 4.9 EUR |