BSDW20G120C2 Bourns Inc.
Hersteller: Bourns Inc.
Description: DIODE ARR SIC SCHOT 1200V TO247
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.37 EUR |
| 30+ | 9.1 EUR |
| 120+ | 8.94 EUR |
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Technische Details BSDW20G120C2 Bourns Inc.
Description: DIODE ARR SIC SCHOT 1200V TO247, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io) (per Diode): 20A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote BSDW20G120C2 nach Preis ab 12.9 EUR bis 17.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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BSDW20G120C2 | Bourns |
SiC Schottky Diodes 1200V each 10A High Surge Dual SiC diode in TO247-3 |
auf Bestellung 2919 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSDW20G120C2 |
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Hersteller: Bourns
SiC Schottky Diodes 1200V each 10A High Surge Dual SiC diode in TO247-3
SiC Schottky Diodes 1200V each 10A High Surge Dual SiC diode in TO247-3
auf Bestellung 2919 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.8 EUR |
| 10+ | 14.85 EUR |
| 600+ | 12.9 EUR |