BSDW20G65C2 Bourns Inc.
Hersteller: Bourns Inc.Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.87 EUR |
| 30+ | 7.89 EUR |
| 120+ | 7.06 EUR |
| 510+ | 6.23 EUR |
| 1020+ | 5.60 EUR |
| 2010+ | 5.25 EUR |
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Technische Details BSDW20G65C2 Bourns Inc.
Description: DIODE ARR SIC SCHOT 650V TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-247, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote BSDW20G65C2 nach Preis ab 7.09 EUR bis 10.23 EUR
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BSDW20G65C2 | Hersteller : Bourns |
SiC Schottky Diodes 650V each 10A High Surge Dual SiC schottky diode in TO247-3 |
auf Bestellung 2350 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSDW20G65C2 | Hersteller : Bourns |
650V each 10A High Surge Dual SiC schottky diode in TO247-3 |
Produkt ist nicht verfügbar |