Technische Details BSF035NE2LQXUMA1 Infineon Technologies
Description: MOSFET N-CH 25V 22A/69A 2WDSON, Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 12 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.2W (Ta), 28W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSF035NE2LQXUMA1 nach Preis ab 1.13 EUR bis 1.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| BSF035NE2LQXUMA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSF035NE2LQXUMA1 - BSF035NE2 POWER FIELD-EFFECT TRANSISTORtariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3432 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BSF035NE2LQXUMA1 |
![]() |
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSF035NE2LQXUMA1 - BSF035NE2 POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - BSF035NE2LQXUMA1 - BSF035NE2 POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 3432 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 647+ | 1.13 EUR |


