BSF134N10NJ3GXUMA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSF134N10NJ3GXUMA1 - BSF134N10 12V-300V N-CHANNEL POWER
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BSF134N10NJ3GXUMA1 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 100V 9A/40A 2WDSON, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 3.5V @ 40µA, Power Dissipation (Max): 2.2W (Ta), 43W (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON.
Weitere Produktangebote BSF134N10NJ3GXUMA1 nach Preis ab 1.67 EUR bis 5.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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BSF134N10NJ3GXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 9A/40A 2WDSON Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-WDSON Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: MG-WDSON-2, CanPAK M™ Vgs(th) (Max) @ Id: 3.5V @ 40µA Power Dissipation (Max): 2.2W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 4914 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSF134N10NJ3GXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A 2WDSON
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 100V 9A/40A 2WDSON
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 4914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| 10+ | 3.51 EUR |
| 100+ | 2.42 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.8 EUR |
| 2000+ | 1.67 EUR |