Produkte > INFINEON TECHNOLOGIES > BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1

BSF134N10NJ3GXUMA1 Infineon Technologies

BSF134N10NJ3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e779412012e7afa4a6c3834
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A 2WDSON
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 4924 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.07 EUR
10+2.64 EUR
100+1.81 EUR
500+1.46 EUR
1000+1.35 EUR
2000+1.25 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSF134N10NJ3GXUMA1 Infineon Technologies

Description: MOSFET N-CH 100V 9A/40A 2WDSON, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 3.5V @ 40µA, Power Dissipation (Max): 2.2W (Ta), 43W (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON.

Weitere Produktangebote BSF134N10NJ3GXUMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 Infineon Technologies BSF134N10NJ3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e779412012e7afa4a6c3834 Description: MOSFET N-CH 100V 9A/40A 2WDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSF134N10NJ3GXUMA1 BSF134N10NJ3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e779412012e7afa4a6c3834
BSF134N10NJ3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A 2WDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH