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BSF134N10NJ3GXUMA1

BSF134N10NJ3GXUMA1 Infineon Technologies

BSF134N10NJ3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e779412012e7afa4a6c3834 Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
auf Bestellung 4971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
10+2.93 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.5 EUR
2000+1.39 EUR
Mindestbestellmenge: 4
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Technische Details BSF134N10NJ3GXUMA1 Infineon Technologies

Description: MOSFET N-CH 100V 9A/40A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.2W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V.

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BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 Hersteller : ROCHESTER ELECTRONICS INFNS28779-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - BSF134N10NJ3GXUMA1 - BSF134N10 12V-300V N-CHANNEL POWER
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 4635 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 Hersteller : Infineon Technologies 7205bsf134n10nj3g_rev2.4_.pdffolderiddb3a304313b8b5a60113cee8763b02d7.pdf Trans MOSFET N-CH 100V 9A Automotive 7-Pin WDSON T/R
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BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 Hersteller : Infineon Technologies BSF134N10NJ3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e779412012e7afa4a6c3834 Description: MOSFET N-CH 100V 9A/40A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH